我們研發(fā)并生產的2-6英半導體級以及半絕緣級高純度砷化鎵晶體和晶片被廣泛應用于半導體集成電路以及LED通用照明等領域。
Our 2’’ to 6’’ semi-conducting & semi-insulating GaAs crystal & wafer are wildly used in semiconductor integrated circuit application & LED general lighting application.
半導體砷化鎵規(guī)格 Specifications of semi-conducting GaAs wafer
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生長方法 |
VGF |
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摻雜類型 |
P型：鋅 |
N型：硅 |
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晶片形狀 |
圓形（尺寸2、3、4、6英寸） |
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晶向 |
(100)±0.5° |
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* Other Orientations maybe available upon request |
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Dopant |
硅 （N 型） |
鋅 （P 型） |
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載流子濃度 |
( 0.8-4) × 1018 |
( 0.5-5) × 1019 |
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遷移率 |
( 1-2.5) × 103 |
50-120 |
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位錯 |
100-5000 |
3,000-5,000 |
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直徑 |
50.8±0.3 |
76.2±0.3 |
100±0.3 |
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厚度 |
350±25 |
625±25 |
625±25 |
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TTV [P/P] (μm) |
≤ 4 |
≤ 4 |
≤ 4 |
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TTV [P/E] (μm) |
≤ 10 |
≤ 10 |
≤ 10 |
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WARP (μm) |
≤ 10 |
≤ 10 |
≤ 10 |
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OF (mm) |
17±1 |
22±1 |
32.5±1 |
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OF / IF (mm) |
7±1 |
12±1 |
18±1 |
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Polish* |
E/E, |
E/E, |
E/E, |
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*E=Etched, P=Polished（*E=腐蝕, P=拋光） |
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**If needed by customer |
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半絕緣砷化鎵 Specifications of semi-insulating GaAs wafer
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生長方法 Growth Method |
VGF |
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摻雜類型 Dopant |
SI 型：碳 SI Type: Carbon |
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晶片形狀 Wafer Shape |
圓形（尺寸2、3、4、6英寸） Round (DIA: 2", 3", 4", 6") |
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晶向 Surface Orientation * |
(100)±0.5° |
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* Other Orientations maybe available upon request 其他晶向要求可根據客戶需求加工 |
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電阻率 Resistivity (Ω.cm) |
≥ 1 × 107 |
≥ 1 × 108 |
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遷移率 Mobility (cm2/V.S) |
≥ 5,000 |
≥ 4,000 |
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位錯 Etch Pitch Density (cm2) |
1,500-5,000 |
1,500-5,000 |
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晶片直徑 Wafer Diameter (mm) |
50.8±0.3 |
76.2±0.3 |
100±0.3 |
150±0.3 |
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厚度 Thickness (μm) |
350±25 |
625±25 |
625±25 |
675±25 |
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TTV [P/P] (μm) |
≤ 4 |
≤ 4 |
≤ 4 |
≤ 4 |
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TTV [P/E] (μm) |
≤ 10 |
≤ 10 |
≤ 10 |
≤ 10 |
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WARP (μm) |
≤ 10 |
≤ 10 |
≤ 10 |
≤ 15 |
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OF (mm) |
17±1 |
22±1 |
32.5±1 |
NOTCH |
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OF / IF (mm) |
7±1 |
12±1 |
18±1 |
N/A |
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Polish* |
E/E, P/E, P/P |
E/E, P/E, P/P |
E/E, P/E, P/P |
E/E, P/E, P/P |
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*E=Etched, P=Polished （*E=腐蝕, P=拋光） |
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**If needed by customer 根據客戶需要 |
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